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| DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistors FEATURES * Interdigitated structure provides high emitter efficiency * Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR * Gold metallization realizes very stable characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input and output prematching ensures good stability and easy broadband use. APPLICATIONS * Common base class-B broadband amplifiers under CW conditions in military and professional applications. PZ1418B30U; PZ1721B25U; PZ2024B20U PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, halfpage 1 c b 3 e 2 DESCRIPTION Top view MAM314 NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 C in a common base class-B wideband amplifier. TYPE NUMBER PZ1418B30U PZ1721B25U PZ2024B20U f (GHz) 1.4 to 1.8 1.7 to 2.1 2 to 2.4 VCC (V) 28 28 28 PL (W) 27 25 20 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Gp (dB) 7.3 7 6 C (%) 38 35 35 Zi; ZL () see Figs 6 and 7 see Figs 11 and 12 see Figs 16 and 17 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature Tmb 75 C PZ1418B30U; PZ1721B25U; PZ2024B20U CONDITIONS open emitter open base RBE = 0 open collector - - - - - - MIN. MAX. 40 15 35 3 4 45 +200 200 235 V V V V A W UNIT -65 - - C C C handbook, 50 MGD970 Ptot (W) 40 30 20 10 0 0 50 100 150 200 Tmb (C) Fig.2 Power derating curve as a function of mounting base temperature. 1997 Feb 19 3 Philips Semiconductors Product specification NPN microwave power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink PZ1418B30U; PZ1721B25U; PZ2024B20U CONDITIONS Tj = 75 C Tj = 75 C; note 1 MAX. 2.2 0.2 UNIT K/W K/W 1. See "Mounting recommendations in the General part of handbook SC15". CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO ICES IEBO PARAMETER collector cut-off current collector cut-off current emitter cut-off current CONDITIONS VCB = 40 V; IE = 0 VCB = 30 V; IE = 0 VCE = 35 V; RBE = 0 VEB = 1.5 V; IC = 0 10 5 50 200 MAX. UNIT mA mA mA A APPLICATION INFORMATION PZ1418B30U Microwave performance up to Tmb = 25 C in a common base class B wideband amplifier. TYPE NUMBER PZ1418B30U f (GHz) 1.4 to 1.8 VCC (V) 28 PL (W) 27 typ. 35 Gp (dB) 7.3 typ. 8.4 C (%) 38 typ. 45 Zi; ZL () see Figs 6 and 7 handbook, full pagewidth 2 4 5 5 2 5.5 2 input 50 0.65 6.5 12 21 4 0.65 100 pF (ATC) 8.5 output 50 MGK064 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: r = 10. Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation (PZ1418B30U). 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U handbook, halfpage (1) (2) (3) 40 MGD984 handbook, halfpage 40 MGL066 PL (W) PL (W) 30 PL C (%) 20 C 50 40 VSWR 0 0 2 4 Pi (W) 6 1.4 1.5 1.6 1.7 VSWR 2 1 1.8 1.9 f (GHz) Class-B operation; VCC = 28 V; Tmb = 25 C. (1) 1.4 GHz. (2) 1.6 GHz. (3) 1.8 GHz. Class-B operation; VCC = 28 V; Tmb = 25 C; Pi = 5 W. Fig.5 Fig.4 Load power as a function of input power; typical values for PZ1418B30U. Load power, efficiency and VSWR as functions of frequency; typical value for PZ1418B30U. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U handbook, full pagewidth 1 0.5 2 1.4 GHz 0.2 1.6 1.8 +j 0 -j 0.2 0.5 1 5 2 5 10 5 10 10 0.2 5 0.5 1 Zo = 5 . 2 MGL024 Fig.6 Input impedance as a function of frequency; typical values for PZ1418B30U. handbook, full pagewidth 1 0.5 2 0.2 5 10 2 5 10 +j 0 -j 0.2 0.5 1.6 5 1 1.8 1.4 GHz 10 0.2 5 0.5 1 Zo = 5 . 2 MGL025 Fig.7 Optimum load impedance as a function of frequency; typical values for PZ1418B30U. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U PZ1721B25U Microwave performance up to Tmb = 25 C in a common base class B wideband amplifier. TYPE NUMBER PZ1721B25U f (GHz) 1.7 to 2.1 VCC (V) 28 PL (W) 25 typ. 30 Gp (dB) 7 typ. 7.8 C (%) 35 typ. 44 Zi; ZL () see Figs 11 and 12 handbook, full pagewidth 2 5 4 3 3 2 3 5 2 input 50 0.65 4 10 10 5 0.65 5 4 100 pF (ATC) output 50 MGK063 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: r = 10. Fig.8 Wideband test circuit board for 1.7 to 2.1 GHz operation (PZ1721B25U). handbook, halfpage 40 MGL008 35 PL (W) 25 C PL MGL014 PL (W) (1) (2) (3) C (%) 50 20 40 VSWR 2 VSWR 0 0 2 4 Pi (W) 6 1.7 1.8 1.9 2.0 1 2.2 2.1 f (GHz) Class-B operation; VCC = 28 V; Tmb = 25 C. (1) 1.7 GHz. (2) 1.9 GHz. (3) 2.1 GHz. Class-B operation; VCC = 28 V; Tmb = 25 C; Pi = 5 W. Fig.9 Load power as a function of input power; typical values for PZ1721B25U. 7 Fig.10 Load power, efficiency and VSWR as functions of frequency; typical values for PZ1721B25U. 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U handbook, full pagewidth 1 0.5 2 0.2 1.7 GHz 1.9 2.1 5 10 5 10 +j 0 -j 0.2 0.5 1 5 2 10 0.2 5 0.5 1 Zo = 5 . 2 MGL026 Fig.11 Input impedance as a function of frequency; typical values for PZ1721B25U. handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 -j 0.2 0.5 5 1 1.9 2.1 2 1.7 GHz 5 10 10 0.2 5 0.5 1 Zo = 5 . 2 MGL027 Fig.12 Optimum load impedance as a function of frequency; typical values for PZ1721B25U. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U PZ2024B20U Microwave performance up to Tmb = 25 C in a common base class B wideband amplifier. TYPE NUMBER PZ2024B20U f (GHz) 2 to 2.4 VCC (V) 28 PL (W) 20 typ. 26 Gp (dB) 6 typ. 7 C (%) 35 typ. 42 Zi; ZL () see Figs 16 and 17 dbook, full pagewidth 5 0.8 input 50 5.5 6 14 6 5 1.5 1.5 0.8 2 output 50 1.3 100 pF (ATC) 2 30 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: r = 10. 5.5 2.5 3 4 2.7 2.5 3.7 2.5 4.5 30 2.5 MSA109 Fig.13 Wideband test circuit board for 2 to 2.4 GHz operation (PZ2024B20U). handbook, halfpage 40 MGL016 35 PL (W) 25 MGL015 PL (W) f = 2 GHz 2.2 PL C (%) 50 2.4 C 20 40 VSWR 2 VSWR 0 0 2 4 Pi (W) 6 2.0 2.1 2.2 2.3 1 2.5 2.4 f (GHz) Class-B operation; VCC = 28 V; Tmb = 25 C; Pi = 5 W. Class-B operation; VCC = 28 V; Tmb = 25 C. Fig.14 Load power as a function of input power; typical values for PZ2024B20U. 1997 Feb 19 9 Fig.15 Load power, efficiency and VSWR as functions of frequency; typical values for PZ2024B20U. Philips Semiconductors Product specification NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U handbook, full pagewidth 1 0.5 2 2 GHz 0.2 2.2 2.4 +j 0 -j 0.2 0.5 1 5 2 5 10 10 5 10 0.2 5 0.5 1 Zo = 5 . 2 MGL028 Fig.16 Input impedance as a function of frequency; typical values for PZ2024B20U. handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 -j 2.4 0.2 0.2 0.5 5 1 2.2 2 5 10 10 5 2 GHz 0.5 1 Zo = 5 . 2 MGL029 Fig.17 Optimum load impedance as a function of frequency; typical values for PZ2024B20U. 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistors PACKAGE OUTLINE PZ1418B30U; PZ1721B25U; PZ2024B20U handbook, full pagewidth 24 max 0.5 Y 0.1 6.4 max 3.5 2.9 3 seating plane Y 3.1 1.7 max 1 4 min 0.5 X X 3.4 3.2 10.5 max 10.5 max 23 max 0.5 X 2 MBC663 16.5 0.5 Y Dimensions in mm. Torque on nut: max 0.5 Nm. Recommended screw: M3 Fig.18 SOT443A. 1997 Feb 19 11 Philips Semiconductors Product specification NPN microwave power transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PZ1418B30U; PZ1721B25U; PZ2024B20U This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 12 Philips Semiconductors Product specification NPN microwave power transistors NOTES PZ1418B30U; PZ1721B25U; PZ2024B20U 1997 Feb 19 13 Philips Semiconductors Product specification NPN microwave power transistors NOTES PZ1418B30U; PZ1721B25U; PZ2024B20U 1997 Feb 19 14 Philips Semiconductors Product specification NPN microwave power transistors NOTES PZ1418B30U; PZ1721B25U; PZ2024B20U 1997 Feb 19 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127147/00/02/pp16 Date of release: 1997 Feb 19 Document order number: 9397 750 01715 |
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